• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method of assembling a first substrate (1) and a second substrate (3) via metal bonding layers (2, 4), comprising the steps of: - depositing, at the surface of each of the first and second substrates (1, 3), a metal layer (2, 4) of controlled thickness to limit the surface roughness of each of the metal layers deposited below a roughness threshold; - Placing the metal layers deposited on the surface of the first and second substrates; bonding of the first and second substrates by direct contacting the deposited metal bonding layers with a surface roughness bounded by the deposition step. The bonding can be carried out under air, at atmospheric pressure and at room temperature.
    公开号:FR3027250A1
    申请号:FR1460017
    申请日:2014-10-17
    公开日:2016-04-22
    发明作者:Paul Gondcharton；Lamine Benaissa；Bruno Imbert
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The field of the invention is that of the assembly of two substrates by direct bonding of metal layers, in particular for application to the production of microelectronic devices. STATE OF PRIOR ART The three-dimensional integration of microelectronic devices is an interesting alternative to increase their performance, today limited by their integration into two dimensions. This technique consists of stacking levels of active components in the third dimension and connecting them using the Through Silicon Vias (TSV) technology that allows connecting vias to be made through the stack. The collage of the different levels of the stack is a key step in this technique. In other fields of microelectronics, metal bonding is also used to limit the thermal budget applied to the components, for example in the manufacture of power components, photonics, photovoltaics, etc. In all these applications, the assembly of silicon substrates by the direct contact of thin metallic layers (in particular copper layers, this material being mainly used in interconnections in microelectronics) is essential to control at low temperatures. Indeed, the use of thermal budgets can disrupt the alignment or deteriorate the active devices within the substrates. For all these reasons, it is sought to obtain a high mechanical strength bonding at low temperatures.
    [0002] Another theme relates to the production of heterostructures by bonding substrates having different coefficients of thermal expansion. For many applications in fact, for example solar components or radiofrequency components, the introduction of substrates of materials other than silicon is necessary (InP, GaAs, LiNbO 3, LiTaO 5, quartz, etc.). However, the current techniques of direct bonding require the control of surface conditions before bonding and the provision of a thermal budget to reinforce the bonding and thus allow the mechanical strength of such assemblies to post-bonding processes (such as thinning mechanical or Smart CutTn With the addition of a thermal budget, the materials expand differently from each other (due to the difference between the thermal expansion coefficients of different materials) which generates bi-axial stresses in the stack can lead to cracking or even cleavage of one of the substrates of the assembly, so we try to ensure the most robust bonding possible at assembly temperatures and subsequent use, or typically included temperatures between 20 and 50 ° C. Different embodiments allow the assembly of substrates via the direct bonding of thin metallic layers. By direct bonding means the assembly of substrates coated with thin metallic layers without the use of intermediate materials of the "polymer glue" type. A first technique is to provide energy at the time of contacting the plates by heating and application of a uniaxial pressure on either side of the assembly. However, this technique requires temperatures generally greater than 250 ° C. and pressures of the order of the megapascal to obtain copper-copper bonds with high mechanical strength. However, by the use of this technique, the advantage of low bonding temperatures is lost since it exceeds 50 ° C (upper limit of process temperature imposed by certain heterostructures). The process parameters used also depend on the metals to be assembled: the refractory metals must thus be bonded to higher temperatures and pressures than the transition metals (due to the difference in mechanical properties of the asperities composing their surface and their capacity to plastically deform). Another technique allows the bonding at atmospheric pressure. It uses an ionic bombardment activation of the surfaces of the metal layers carried out under vacuum and the assembly of the substrates at atmospheric pressure by direct contacting of adsorbate layers formed on the metal layers and whose thickness is limited by exposure to gaseous oxygen with controlled humidity. In addition to the vacuum environment, this technique has the drawback of requiring bonding at a temperature of 150 ° C., which is incompatible with certain envisaged applications, in particular the production of certain heterostructures. For example, see the article by Shigetou, A. and Suga, T., "Modified diffusion bond process for chemical mechanical polishing (CMP) -Cu at 150C in ambient air", in Electron. Compon. Technol. Conf. 2009 ECTC 2009 59th 365-369 (2009). Another technique makes it possible to bond at room temperature. It consists of directly contacting ultra-empty metal surfaces immediately after they have been deposited without re-airing between deposition and gluing. This technique allows the assembly of substrates from the ambient temperature under compression but requires an ultrahigh vacuum bonding environment that is difficult to use in industry (long process time in desorption, use of tertiary titanium trap pumps, manipulation of substrates in the frame under ultra-high vacuum). For example, see the article by Shimatsu, T. and Uomoto, M. "Atomic diffusion bonding of wafers with thin nanocrystalline metal films", J. Voc. Sci. Technol. B Microelectron. Nanometer Struct. 28, 706-714 (2010). Finally, a last technique described in patent FR 2947481 B1 requires the activation of surfaces by chemical mechanical polishing (CMP) and cleaning. This step makes it possible, in particular, to obtain surfaces that are not very rough (roughness RMS less than 1 nm) and hydrophilic (between 0 and 20 ° drop angle with water). The bonding can thus be carried out at ambient temperature, under atmospheric pressure, especially in air, and without uniaxial pressure at the time of contacting the plates. This technique, however, requires a controlled CMP technique dependent on the metals to be bonded. In addition, depending on the nature of the metal oxide formed during polishing and cleaning (called the oxygen enriched crystalline layer in the patent), the mechanical strength of the final assembly at room temperature may not be sufficient to support the processes. post-bonding. In this case, annealing is necessary, and the upper limit of 50 ° C for some applications is then exceeded.
    [0003] It is thus clear that these different techniques have drawbacks which it would be desirable to remedy: bonding atmosphere under ultra-low vacuum, thermal budgets necessary to reinforce the bonding energy and not compatible with the production of heterostructures, pressure applied to the time of contacting the plates, polishing processes sensitive to the material. DISCLOSURE OF THE INVENTION The invention aims to meet this objective and proposes a method for assembling a first substrate and a second substrate via metal bonding layers, comprising the steps of: depositing at the surface of each of the first and second substrates, a metal layer of controlled thickness for limiting the surface roughness of each of the metal layers deposited below a roughness threshold; - Placing the metal layers deposited on the surface of the first and second substrates; bonding of the first and second substrates by direct contacting the deposited metal bonding layers with a surface roughness bounded by the deposition step. Some preferred but nonlimiting process aspects are as follows: the bonding step is carried out after a maximum time of exposure to air of the deposited metal layers following said venting of less than 30 minutes, preferably less than 20 minutes; the bonding step is carried out at a temperature below 50 ° C., preferably at room temperature, for example between 10 ° and 30 ° C .; the bonding step is carried out at atmospheric pressure; the bonding step is carried out in the air; it comprises, before the deposition of a metal layer on the surface of the first substrate, a step of forming on said first substrate a surface layer; - The surface layer is a diffusion barrier layer of the material of the metal layer in the first substrate, for example a surface layer of titanium nitride or tantalum nitride; - The surface layer is a layer of a material selected from dielectrics, nitrides or metals whose surface roughness does not allow direct bonding of the first and second substrates; the first and second substrates have different coefficients of thermal expansion; the metal layers are deposited physically by the vapor phase; the metal layers are copper layers of controlled thickness to limit their surface roughness, as measured with an atomic force microscope scanning an area of 1 * 1 11m2, below 1.0 nm RMS; the metal layers are gold layers of controlled thickness to limit their surface roughness, as measured with an atomic force microscope scanning an area of 1 * 11m2, below 1.2 nm RMS; before contact bonding, it comprises the formation, by implantation of atomic species, of an embrittlement zone inside the first substrate, and, after bonding, the removal of a portion of the first substrate by separation of said first substrate at the weakening zone. BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and characteristics of the invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made in reference to the accompanying drawings in which: Figs. 1a-1c are diagrams illustrating the steps of a possible embodiment of the method according to the invention; Figures 2a and 2b illustrate the surface roughness of metal layers, respectively gold and copper, depending on the thickness deposited on a silicon substrate coated with a surface layer of titanium nitride; FIGS. 3a and 3b illustrate a bonding of silicon substrates by direct contact with surface layers of molybdenum and by direct contact with gold metal layers deposited on such molybdenum layers; FIG. 4 illustrates the gluing phenomena during and after direct contact of the gold metal layers of FIG. 3b. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS With reference to FIGS. 1a-1c, the invention relates to a method of assembling a first substrate 1 and a second substrate 3 via metal bonding layers 2, 4 Substrates 1, 3 consist of materials generally selected from semiconductor, metal or ceramic materials used in the microelectronics industry. The substrates are not necessarily identical in nature, and may in particular have different coefficients of thermal expansion at least in one of the orientations of the substrates, typically coefficients differing by at least 10% or 20% at room temperature. By way of illustrative examples, the first substrate may be a silicon substrate and the second substrate may be a quartz or lithium niobate substrate.
    [0004] As illustrated in FIG. 1a, the method comprises a deposition step, on the surface of each of the first and second substrates 1, 3, of a metal layer 2, 4, for example by physical vapor phase PVD (for Physical Vapor Deposition). The metal layer 2, 4 deposited on the surface of each of the substrates 1, 3 is for example a layer of aluminum, gold, silver, titanium or copper.
    [0005] In one possible embodiment, the method comprises, before the deposition of a metal layer on the surface of one of the substrates, for example the first substrate, a step of forming on said substrate a surface layer. The surface layer is for example a metal layer or an oxide layer. The surface layer may in particular be a diffusion barrier layer of the material of the metal layer in the substrate, for example a surface layer of titanium nitride or tantalum nitride. The surface layer may also be a layer of a material selected from dielectrics, nitrides or metals whose surface roughness does not allow direct bonding of the first and second substrates.
    [0006] In the context of the invention, the deposited metal layers 2, 4 are each of controlled thickness to limit the surface roughness of each of the metal layers deposited below a roughness threshold. It is known that the greater the thickness of a deposited metal layer, the greater the surface roughness of the metal layer increases. Thus, according to the surface roughness of the first and second substrates 1, 3, the person skilled in the art knows perfectly how to adapt the thickness of deposited metal so that the surface roughness of the deposited metal layers remains below the roughness threshold. This constraint is practically translated by the deposition of metal layers 2, 4 very thin, for example of thicknesses less than 100 nm. FIGS. 2a and 2b show the evolution of the surface roughness, as measured with an atomic force microscope sweeping a surface of 1 * 1 11rn2, of gold or copper metal layers respectively according to the thickness deposited on a silicon substrate covered with a surface layer of titanium nitride 20nm thick. In each of these figures, the area surrounded by dashed lines represent the pairs of parameters compatible with the direct bonding according to the invention. Thus, when the metal layers are copper layers, their thickness is preferably controlled to limit their surface roughness, as measured with an atomic force microscope sweeping a surface of 1 * 1 11m2, below 1.0 nm RMS. This corresponds, for a continuous metal layer (full plate), to a peak-to-valley surface roughness below about 10 nm. Similarly, when the metal layers are gold layers, their thickness is preferably controlled to limit their surface roughness, as measured with an atomic scanning microscope scanning an area of 1 * 1 μm 2, below 1.2 nm RMS. This corresponds, for a continuous metal layer (full plate), to a peak to hollow surface roughness below about 12 nm. Returning to the description of the process according to the invention, it comprises following the formation of the metal layers a step of venting the deposited metal layers 2, 4 on the surface of the first and second substrates 1, 3. In air makes the process according to the invention much easier to implement from an industrial point of view than the techniques requiring to provide a vacuum environment or protective atmosphere against the metal oxidation. Then, with reference to FIG. 1b, the method comprises a step of bonding the first and second substrates 1, 3 by direct contacting the metal bonding layers 2, 4 deposited at a surface roughness bounded by the deposition step. The surface roughness of the layers placed in direct contact is thus directly resulting from the deposition step, without the need for CMP polishing. Thus, the method does not include a CMP polishing step to obtain the bonding, the surface roughness of the layers in direct contact being that obtained at the end of the deposition step. This bonding step is carried out after a maximum time of exposure to air of the deposited metal layers following said venting which is preferably less than 30 minutes, more preferably less than 20 minutes. The bonding step may in particular be carried out at a temperature below 50 ° C., in particular at room temperature, for example between 10 ° C. and 30 ° C. It can also be carried out at atmospheric pressure, especially in air. At the end of the bonding step, and as schematically shown in FIG. 1c, no bonding interface is observed between the metal layers 2, 4 but in fine a single metal layer 5 between the first and second substrates 1 3. The bonding thus results in a reconstruction of the bonding interface (that is to say an interpenetration of grains through the bonding interface), no continuous layer of metal oxide being detected at the interface. Without wishing to be attached to any scientific theory, the following hypothesis of the mechanism to achieve such a collage can be advanced: The chain of deposition of the thin metal layer, the release to the air and the implementation surface contact prevents or limits the formation of a layer of metal oxide or a surface-adsorbed hydrocarbon layer, which leaves the possibility of creating metal bonds at room temperature. This assumption is supported in particular by high membership work measures indicating a change in the membership regime. The attractive forces involved are thus stronger than in the classical case in which the van der Waals forces are driving adhesion. The nature of the two metals used in the process of the invention is particular: they are ductile materials. Thus, in the adhesion mechanism, the repulsive forces being related to the mechanical response of the asperities, these materials will have a tendency to better deform under the action of the attractive forces. The combined action of this easier deformation and forces involved stronger therefore pushes the limit of roughness compatible with the direct bonding of these surfaces. In addition to allowing the realization of a bonding that does not require an ultra-vacuum atmosphere, no application no thermal budget, no application of pressure, no polishing, another advantage of the invention relates to assembling superficial layers which have a roughness too high to allow their direct bonding.
    [0007] By way of example, surface layers of molybdenum deposited on Si substrates and with a surface roughness of 0.8 nm RMS are too high to allow their assembly by direct contact as shown in FIG. 3a. The quality of the bonding is evaluated by scanning acoustic microscopy: the areas with the clearest contrast are not glued while the darkest contrast zones are. On the other hand, by depositing a thin gold layer with a thickness of 10 nm on a molybdenum layer, a surface roughness of 0.9 nm RMS less than the roughness threshold of 1.2 nm RMS exemplified above is ensured. and thus the realization of a direct bonding resulting in a perfect assembly as is apparent from Figure 3b. In order to study the phenomena after direct bonding of the structure of FIG. 3b, TEM (Transmission Electron Microscopy) sections were made and observed on the bonding of the Si-Mo-Au structure I-Au-Mo-Si. The left section of FIG. 4 illustrates the structure immediately after contacting, the reference RI indicating the initial roughness of the molybdenum layer. The central section and the right section (where the dotted line is positioned at the original interface) of Figure 4 illustrate the complete reconstruction of the gold layers and the disappearance of the bonding interface at room temperature. Gold surfaces with no oxides or hydrocarbons made a real "atomic zip" of both surfaces. Finally, the ductility of the gold layers made it possible to bond Mo surfaces showing very significant roughness at the grain head (notably due to the growth of columnar Mo).
    [0008] In a possible embodiment of the invention, the method comprises following the bonding a step of removing a portion of the first substrate. This shrinkage can be achieved by mechanical and / or chemical thinning, or by separation of the first substrate at a previously weakened zone, for example by carrying out an ion implantation. Thus, the method according to the invention can comprise, before bonding the substrates, the formation by implantation of atomic species of an embrittlement zone inside the first substrate, and the thinning, after bonding, of the first substrate. by separating said first substrate at the weakening zone. By thus implementing Smart CutTM technology in the context of the process according to the invention, it is possible to carry out a layer on another substrate, in particular despite different coefficients of thermal expansion.
    权利要求:
    Claims (13)
    [0001]
    REVENDICATIONS1. A method of assembling a first substrate (1) and a second substrate (3) via metal bonding layers (2, 4), comprising the steps of: depositing, on the surface of each of the first and second substrates (1, 3), a metal layer (2, 4) of controlled thickness to limit the surface roughness of each of the metal layers deposited below a roughness threshold; venting the metal layers deposited on the surface of the first and second substrates; bonding the first and second substrates by directly contacting the deposited metal bonding layers with a bounded surface roughness by the deposition step.
    [0002]
    2. Method according to claim 1, wherein the bonding step is carried out after a maximum time of exposure to air of the deposited metal layers following said venting of less than 30 minutes, preferably less than 30 minutes. 20 minutes.
    [0003]
    3. Method according to one of claims 1 and 2, wherein the bonding step is carried out at a temperature below 50 ° C, preferably at room temperature, for example between 100 and 30 ° C.
    [0004]
    4. Method according to one of claims 1 to 3, wherein the bonding step is carried out at atmospheric pressure.
    [0005]
    5. Method according to one of claims 1 to 4, wherein the bonding step is carried out in air.
    [0006]
    6. Method according to one of claims 1 to 5, comprising, before the deposition of a metal layer on the surface of the first substrate, a forming step on said first substrate of a surface layer.
    [0007]
    7. The method of claim 6, wherein the surface layer is a diffusion barrier layer of the material of the metal layer in the first substrate, for example a surface layer of titanium nitride or tantalum nitride.
    [0008]
    8. The method of claim 6, wherein the surface layer is a layer of a material selected from dielectrics, nitrides or metals whose surface roughness does not allow direct bonding of the first and second substrates.
    [0009]
    9. Method according to one of claims 1 to 8, wherein the first and second substrates have different coefficients of thermal expansion.
    [0010]
    10. Method according to one of claims 1 to 9, wherein the metal layers are deposited by the physical vapor phase.
    [0011]
    11. Method according to one of claims 1 to 10, wherein the metal layers are copper layers of controlled thickness to limit their surface roughness, as measured with an atomic force microscope sweeping a surface of 1 * 1 11m2, below 1.0 nm RMS.
    [0012]
    12. Method according to one of claims 1 to 11, wherein the metal layers are gold layers of controlled thickness to limit their surface roughness, as measured with an atomic force microscope scanning a surface of 1 * 1 μm 2, below 1.2 nm RMS.
    [0013]
    13. Method according to one of claims 1 to 12, comprising, before the contact bonding, the formation, by implantation of atomic species, of an embrittlement zone inside the first substrate, and, after bonding, the removing a portion of the first substrate by separating said first substrate at the weakening zone.
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    公开号 | 公开日
    EP3207564B1|2021-08-18|
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    FR3027250B1|2019-05-03|
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    WO2016059094A1|2016-04-21|
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    FR2947481A1|2009-07-03|2011-01-07|Commissariat Energie Atomique|SIMPLIFIED COPPER-COPPER BONDING PROCESS|
    JP5144585B2|2009-05-08|2013-02-13|住友電気工業株式会社|Semiconductor device and manufacturing method thereof|
    JP5612688B2|2009-08-26|2014-10-22|海洋王照明科技股▲ふん▼有限公司|LIGHT EMITTING ELEMENT, ITS MANUFACTURING METHOD, AND LIGHT EMITTING METHOD|
    KR20120052160A|2010-11-15|2012-05-23|엔지케이 인슐레이터 엘티디|Composite substrate and composite substrate manufacturing method|
    KR102188495B1|2014-01-21|2020-12-08|삼성전자주식회사|Manufacturing Method of Semiconductor Light Emitting Devices|
    DE102014106231A1|2014-05-05|2015-11-05|Ev Group E. Thallner Gmbh|Method and device for permanent bonding|FR3054074B1|2016-07-18|2018-08-03|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PROCESS FOR DIRECT METAL-METAL COLLAGE|
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    法律状态:
    2015-11-02| PLFP| Fee payment|Year of fee payment: 2 |
    2016-04-22| PLSC| Publication of the preliminary search report|Effective date: 20160422 |
    2016-10-28| PLFP| Fee payment|Year of fee payment: 3 |
    2017-10-31| PLFP| Fee payment|Year of fee payment: 4 |
    2018-10-30| PLFP| Fee payment|Year of fee payment: 5 |
    2019-10-31| PLFP| Fee payment|Year of fee payment: 6 |
    2020-10-30| PLFP| Fee payment|Year of fee payment: 7 |
    2021-10-29| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1460017A|FR3027250B1|2014-10-17|2014-10-17|PROCESS FOR DIRECT COLLAGE VIA LOW ROUGH METAL LAYERS|
    FR1460017|2014-10-17|FR1460017A| FR3027250B1|2014-10-17|2014-10-17|PROCESS FOR DIRECT COLLAGE VIA LOW ROUGH METAL LAYERS|
    US15/519,203| US10115698B2|2014-10-17|2015-10-14|Method for direct adhesion via low-roughness metal layers|
    JP2017519514A| JP6778184B2|2014-10-17|2015-10-14|Method for direct adhesion via low roughness metal layer|
    PCT/EP2015/073746| WO2016059094A1|2014-10-17|2015-10-14|Method for direct adhesion via low-roughness metal layers|
    EP15780848.6A| EP3207564B1|2014-10-17|2015-10-14|Method for direct adhesion via low-roughness metal layers|
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